Semiconductor device having high breakdown voltage
US5162876A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1991 |
| Grant date | Nov 10, 1992 |
| Priority date | — |
| Expiry date | Sep 27, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/928
Abstract
A p-type emitter layer 2 is formed in one surface portion of an n.sup.- -type base layer 1 of high resistance. p.sup.+ -type contact layers 2b and n.sup.+ -type current blocking layers 6 are formed in a preset area ratio in the surface area of the p-type emitter layer. A cathode electrode 4 is formed in contact with the contact layer 2b as well as the current blocking layer 6 of the pn junction diode section. With this cathode structure, the electron injection in the ON state can be suppressed so as to reduce the carrier concentration of a portion of the n.sup.- -type base layer 1 lying on the cathode side, and the parasitic transistor effect caused at the time of reverse recovery can be suppressed by provision of the current blocking layer 6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.