Mitsuhiko Kitagawa
55Patents
15h-index
48Co-inventors
84Inventor score
Filing activity: Mar 31, 1989 → Jan 15, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5554862A | Power semiconductor device | Electricity | 114 | Expired |
| US5329142A | Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure | Electricity | 84 | Expired |
| US5162876A | Semiconductor device having high breakdown voltage | Emerging Cross-Sectional Technologies | 67 | Expired |
| US5448083A | Insulated-gate semiconductor device | Electricity | 39 | Expired |
| US5689121A | Insulated-gate semiconductor device | Electricity | 39 | Expired |
| US5250446A | Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths | Emerging Cross-Sectional Technologies | 35 | Expired |
| US5838026A | Insulated-gate semiconductor device | Electricity | 34 | Expired |
| US5464994A | Insulated-gate thyristor | Electricity | 31 | Expired |
| US6777746B2 | Field effect transistor and application device thereof | Electricity | 31 | Expired |
| US5585651A | Insulated-gate semiconductor device having high breakdown voltages | Electricity | 29 | Expired |
| US5381026A | Insulated-gate thyristor | Electricity | 24 | Expired |
| US8076749B2 | Semiconductor device | Electricity | 24 | Active |
| US5243205A | Semiconductor device with overvoltage protective function | Electricity | 22 | Expired |
| US5796125A | High breakdown voltage semiconductor device using trench grooves | Electricity | 20 | Expired |
| US4996586A | Crimp-type semiconductor device having non-alloy structure | Electricity | 18 | Expired |
| US5793065A | Insulated-gate thyristor | Electricity | 14 | Expired |
| US6236069A | Insulated-gate thyristor | Electricity | 14 | Expired |
| US5376815A | Semiconductor device having bipolar-mos composite element pellet suitable for pressure contacted structure | Electricity | 14 | Expired |
| US5223442A | Method of making a semiconductor device of a high withstand voltage | Electricity | 13 | Expired |
| US7202526B2 | Field effect transistor and application device thereof | Electricity | 12 | Expired |
| US5298769A | GTO thyristor capable of preventing parasitic thyristors from being generated | Electricity | 12 | Expired |
| US5156981A | Method of making a semiconductor device of a high withstand voltage | Electricity | 11 | Expired |
| US5006921A | Power semiconductor switching apparatus with heat sinks | Electricity | 11 | Expired |
| US5510647A | Semiconductor device and method of manufacturing the same | Electricity | 11 | Expired |
| US5210601A | Compression contacted semiconductor device and method for making of the same | Electricity | 10 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.