Semiconductor device having enhanced impurity concentration profile
US5163178A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 1990 |
| Grant date | Nov 10, 1992 |
| Priority date | — |
| Expiry date | Dec 27, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device comprises a semiconductor substrate provided with a collector region a base region and an emitter region in a lateral arrangement. Respective portions having peak impurity concentrations of the collector region and the emitter region are formed within the semiconductor substrate. A method of fabricating a semiconductor device comprises a step of forming a collector region of a second conduction type and an emitter region of a second conduction type in a lateral arrangement in a semiconductor substrate serving as a base region of a first conduction type by using a first mask provided with a pair of openings, and a step of forming heavily doped regions of the second conduction type so as to be connected respectively to the collector region and the emitter region by using a second mask provided with a pair of openings separated from each other by a distance greater than the distance between the openings of the first mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.