Hiroaki Anmo
9Patents
7h-index
14Co-inventors
52Inventor score
Filing activity: Feb 7, 1990 → Nov 27, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5541124A | Method for making bipolar transistor having double polysilicon structure | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5163178A | Semiconductor device having enhanced impurity concentration profile | Electricity | 28 | Expired |
| US5665615A | Method of making BiCMOS semiconductor device | Electricity | 20 | Expired |
| US5643806A | Manufacturing method for making bipolar device | Emerging Cross-Sectional Technologies | 18 | Expired |
| US5324672A | Manufacturing method for bipolar transistor | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5055905A | Semiconductor device | Electricity | 9 | Expired |
| US5641692A | Method for producing a Bi-MOS device | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5856228A | Manufacturing method for making bipolar device having double polysilicon structure | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5101258A | Semiconductor integrated circuit device of master slice approach | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.