Low voltage programming antifuse and transistor breakdown method for making same
US5163180A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1991 |
| Grant date | Nov 10, 1992 |
| Priority date | — |
| Expiry date | Jan 18, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An antifuse structure according to a first aspect of the present invention is programmed by snap-back breakdown and includes a semiconductor substrate of a first conductivity type, an insulating layer over the surface of the semiconductor substrate, a conductive gate disposed over the insulating layer, spacer elements disposed at the outer edges of the conductive gate, spaced-apart first and second lightly doped regions of a second conductivity type disposed in the semiconductor substrate, the first and second lightly doped regions aligned to the edges of the conductive gate, third and fourth more heavily doped regions of the second conductivity type disposed in the semiconductor substrate, the third and fourth regions contiguous with the first and second regions, respectively, and aligned to the edges of the spacer elements, and a conductive filament in the insulating layer connecting the conductive gate to one of the second and fourth doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.