High temperature transducers and methods of fabricating the same employing silicon carbide
US5165283A · kind A · utility
45Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1991 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | May 2, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49103
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
There is disclosed an apparatus and structure for a pressure transducer employing silicon carbide and utilizing p-type SiC as a diaphragm with n-type mesa SiC force sensing resistors integrally formed on the surface of the diaphragm. The p-type SiC diaphragm is positioned on top of an annular ring of silicon which is formed from a silicon wafer utilized as the supporting wafer for the process. The structure depicted is a given conductivity SiC diaphragm having opposite conductivity SiC resistors positioned thereon and fabricated by processing techniques utilizing selective etching properties of SiC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.