Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5166092A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1990 |
| Grant date | Nov 24, 1992 |
| Priority date | — |
| Expiry date | Oct 30, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of growing compound semiconductor epitaxial layer by an atomic layer epitaxy, comprises the steps of blowing on a predetermined surface a compound source material gas constituted by atoms having an ion polarity different from atoms constituting the predetermined surface so that the compound source material is adsorped on the predetermined surface in a non-decomposed state, and decomposing the adsorped compound source material on the predetermined surface into atoms constituting crystals at the predetermined surface so as to grow an atomic layer of atoms having the same ion polarity as the compound source material gas. The ion polarity of the atomic layer prevents adsorption of the compound source material after the atomic layer is grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.