Substantially facet-free selective epitaxial growth process
US5168089A · kind A · utility
13Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1991 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | May 13, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for growing selective epitaxial layers on a silicon substrate. In a epitaxial growth reactor, hydrogen and the reactive gasses, the silicon source gas and hydrochloric acid, are introduced. The amount of silicon to free hydrochloric acid is controlled to be about 1:6 during the growth process and then turned off, the hydrogen remaining on. The resulting epitaxial layer may be grown over one micron in thickness with less than 0.1 micron of faceting. Further, a etchant of H.sub.2 O and HF diluted in NHO.sub.3 is first used to remove surface damage on the silicon substrate prior to epitaxial layer growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.