Power metal-oxide-semiconductor field effect transistor
US5168331A · kind A · utility
170Cited by
6References
39Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 31, 1991 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | Jan 31, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A metal-oxide-semiconductor field effect transistor constructed in a trench or groove configuration is provided with protection against voltage breakdown by the formation of a shield region adjacent to the insulating layer which borders the gate of the transistor. The shield region is either more lightly doped than, or has a conductivity opposite to, that of the region in which it is formed, normally the drift or drain region, and it is formed adjacent to a corner on the boundary between the insulating layer and the drift or drain region, where voltage breakdown is most likely to occur.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.