Ferroelectrics epitaxially grown on superconducting substrates
US5168420A · kind A · utility
39Cited by
7References
23Claims
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Key dates
| Filing date | Nov 20, 1990 |
| Grant date | Dec 1, 1992 |
| Priority date | — |
| Expiry date | Nov 20, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A ferroelectric storage element and its method of growth. A thin ferroelectric film, for example, of bismuth titanate, is epitaxially grown on a perovskite crystalline substrate of thin film that is superconductive at some temperature. For example, the thin film may be YBa.sub.2 Cu.sub.3 O.sub.7-x, Bi.sub.2 Sr.sub.2 CuO.sub.6+x, or Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8+x.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.