Ramamoorthy Ramesh
90Patents
26h-index
63Co-inventors
91Inventor score
Filing activity: Oct 11, 1985 → Dec 11, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5838035A | Barrier layer for ferroelectric capacitor integrated on silicon | Electricity | 141 | Expired |
| US5248564A | C-axis perovskite thin films grown on silicon dioxide | Emerging Cross-Sectional Technologies | 137 | Expired |
| US5270298A | Cubic metal oxide thin film epitaxially grown on silicon | Electricity | 135 | Expired |
| US5155658A | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films | Electricity | 122 | Expired |
| US5798903A | Electrode structure for ferroelectric capacitor integrated on silicon | Electricity | 111 | Expired |
| US6642539B2 | Epitaxial template and barrier for the integration of functional thin film metal oxide heterostructures on silicon | Electricity | 106 | Expired |
| US5519235A | Polycrystalline ferroelectric capacitor heterostructure employing hybrid electrodes | Electricity | 105 | Expired |
| US5479317A | Ferroelectric capacitor heterostructure and method of making same | Emerging Cross-Sectional Technologies | 101 | Expired |
| US6115281A | Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors | Electricity | 86 | Expired |
| US5549977A | Article comprising magnetoresistive material | Emerging Cross-Sectional Technologies | 67 | Expired |
| US6274388A | Annealing of a crystalline perovskite ferroelectric cell | Electricity | 63 | Expired |
| US10847201B2 | High-density low voltage non-volatile differential memory bit-cell with shared plate line | Physics | 63 | Active |
| US6610549B1 | Amorphous barrier layer in a ferroelectric memory cell | Electricity | 62 | Expired |
| US5777356A | Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same | Electricity | 62 | Expired |
| US6781176B2 | Conductively doped strontium titanate barrier intermediate a silicon underlayer and an epitaxial metal oxide film | Electricity | 57 | Expired |
| US6518609B1 | Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film | Electricity | 54 | Expired |
| US10944404B1 | Low power ferroelectric based majority logic gate adder | Electricity | 53 | Active |
| US6194754A | Amorphous barrier layer in a ferroelectric memory cell | Electricity | 47 | Expired |
| US11139270B2 | Artificial intelligence processor with three-dimensional stacked memory | Emerging Cross-Sectional Technologies | 46 | Active |
| US10998025B2 | High-density low voltage non-volatile differential memory bit-cell with shared plate-line | Physics | 41 | Active |
| US5168420A | Ferroelectrics epitaxially grown on superconducting substrates | Emerging Cross-Sectional Technologies | 39 | Expired |
| US6265230A | Methods to cure the effects of hydrogen annealing on ferroelectric capacitors | Electricity | 35 | Expired |
| US5324714A | Growth of a,b-axis oriented perovskite thin films over a buffer/template layer | Emerging Cross-Sectional Technologies | 29 | Expired |
| US5169485A | Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element | Electricity | 28 | Expired |
| US6861798B1 | Tailored spacer wall coatings for reduced secondary electron emission | Electricity | 28 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.