Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element
US5169485A · kind A · utility
28Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1991 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | Mar 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F41/32
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory element based upon a thin epitaxial film of manganese aluminum upon a III-V semiconductor is described. The film is stable at elevated temperatures required for III-V semiconductor device processing, so permitting the monolithic integration of non-volatile memory elements with III-V semiconductor electronic and photonic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.