Forming a semiconductor layer using molecular beam epitaxy
US5169798A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1990 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | Jun 28, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of making a semiconductor device that comprises MBE at substrate temperatures substantially lower than conventionally used temperatures. A significant aspect of the method is the ability to produce highly doped (e.g., 10.sup.19 cm.sup.-3) epitaxial single crystal Si layers. The deposition can be carried out such that substantially all (at least 90%) dopant atoms are electrically active at 20.degree. C. However, the method is not limited to Si MBE. Exemplarily, the method can be used to produce epitaxial single crystal GaAs having very short (e.g., <100ps) carrier lifetime. Such material can be useful for, e.g., high speed photodetectors. Incorporation into the method of a relatively low temperature rapid thermal anneal makes possible low temperature MBE growth of relatively thick semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.