David Eaglesham
36Patents
9h-index
45Co-inventors
75Inventor score
Filing activity: Jun 28, 1990 → Jan 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5731626A | Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby | Emerging Cross-Sectional Technologies | 143 | Expired |
| US6043139A | Process for controlling dopant diffusion in a semiconductor layer | Emerging Cross-Sectional Technologies | 133 | Expired |
| US10784477B2 | Rechargeable battery with elastically compliant housing | Emerging Cross-Sectional Technologies | 19 | Active |
| US7704352B2 | High-aspect ratio anode and apparatus for high-speed electroplating on a solar cell substrate | Emerging Cross-Sectional Technologies | 17 | Active |
| US6136672A | Process for device fabrication using a high-energy boron implant | Electricity | 14 | Expired |
| US9887415B2 | Electrochemical cell and method of making the same | Emerging Cross-Sectional Technologies | 13 | Active |
| US7659203B2 | Electroless deposition process on a silicon contact | Electricity | 11 | Expired |
| US8308858B2 | Electroless deposition process on a silicon contact | Electricity | 9 | Active |
| US9882196B2 | Multi-electrode electrochemical cell and method of making the same | Emerging Cross-Sectional Technologies | 9 | Active |
| US7799182B2 | Electroplating on roll-to-roll flexible solar cell substrates | Emerging Cross-Sectional Technologies | 8 | Active |
| US7585769B2 | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE | Electricity | 7 | Active |
| US5169798A | Forming a semiconductor layer using molecular beam epitaxy | Emerging Cross-Sectional Technologies | 7 | Expired |
| US9172111B2 | Layered materials with improved magnesium intercalation for rechargeable magnesium ion cells | Emerging Cross-Sectional Technologies | 6 | Active |
| US8951680B2 | Rechargeable magnesium ion cell components and assembly | Emerging Cross-Sectional Technologies | 5 | Active |
| US8525021B2 | Photovoltaic devices including heterojunctions | Emerging Cross-Sectional Technologies | 4 | Active |
| US7470599B2 | Dual-side epitaxy processes for production of nitride semiconductor structures | Electricity | 3 | Active |
| US9401528B2 | Layered materials with improved magnesium intercalation for rechargeable magnesium ion cells | Emerging Cross-Sectional Technologies | 3 | Active |
| US8294303B2 | Photovoltaic grounding | Emerging Cross-Sectional Technologies | 3 | Active |
| US9240612B2 | Layered materials with improved magnesium intercalation for rechargeable magnesium ion cells | Emerging Cross-Sectional Technologies | 3 | Active |
| US9520513B2 | Photovoltaic devices including heterojunctions | Emerging Cross-Sectional Technologies | 2 | Active |
| US7674662B2 | Process for making thin film field effect transistors using zinc oxide | Electricity | 2 | Active |
| US7575982B2 | Stacked-substrate processes for production of nitride semiconductor structures | Electricity | 1 | Active |
| US8334455B2 | Photovoltaic devices including Mg-doped semiconductor films | Emerging Cross-Sectional Technologies | 1 | Active |
| US10236493B2 | Multi-electrode electrochemical cell and method of making the same | Emerging Cross-Sectional Technologies | 1 | Active |
| US10734683B2 | Additive containing electrolytes for high energy rechargeable metal anode batteries | Emerging Cross-Sectional Technologies | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.