Reaction barrier for a multilayer structure in an integrated circuit
US5170242A · kind A · utility
32Cited by
5References
28Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 10, 1991 |
| Grant date | Dec 8, 1992 |
| Priority date | — |
| Expiry date | May 10, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reaction barrier is formed at an interface region between adjacent layers of a multilayer composite integrated circuit by implanting one or more active ionic species at energies effective to place the ionic species at or near the interface. A further step may include annealing the structure formed above to promote efficacy of the reaction barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.