Method of forming multiple layer collector structure for bipolar transistors

US5171697A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• William U. Liu · Plano, US
• Darrell G. Hill · Tempe, US

Key dates

• Filing date: Jun 28, 1991
• Grant date: Dec 15, 1992
• Expiry date: Jun 28, 2011

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/072

Abstract

Generally, and in one form of the invention, a multiple layer collector structure is provided which comprises a relatively thin, highly doped layer 12 and a relatively thick, low doped or non-intentionally doped layer 14.