Darrell G. Hill
68Patents
13h-index
46Co-inventors
84Inventor score
Filing activity: Jun 28, 1991 → Oct 19, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5445976A | Method for producing bipolar transistor having reduced base-collector capacitance | Emerging Cross-Sectional Technologies | 35 | Expired |
| US6028348A | Low thermal impedance integrated circuit | Emerging Cross-Sectional Technologies | 31 | Expired |
| US5515562A | Sacral and perineal pads | Human Necessities | 31 | Expired |
| US5710068A | Low thermal impedance integrated circuit | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5389554A | Method for fabricating microwave heterojunction bipolar transistors with emitters designed for high power applications | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5552617A | Bipolar transistor | Electricity | 19 | Expired |
| US5789301A | Method for reducing extrinsic base-collector capacitance | Emerging Cross-Sectional Technologies | 16 | Expired |
| US5298438A | Method of reducing extrinsic base-collector capacitance in bipolar transistors | Emerging Cross-Sectional Technologies | 16 | Expired |
| US9362198B2 | Semiconductor devices with a thermally conductive layer and methods of their fabrication | Electricity | 15 | Active |
| US7849540B2 | Reusable surgical perioperative positioning system | Human Necessities | 13 | Active |
| US9799760B2 | Semiconductor device with selectively etched surface passivation | Electricity | 13 | Active |
| US5702958A | Method for the fabrication of bipolar transistors | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5434091A | Method for making collector up bipolar transistors having reducing junction capacitance and increasing current gain | Emerging Cross-Sectional Technologies | 13 | Expired |
| US5171697A | Method of forming multiple layer collector structure for bipolar transistors | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6465297B1 | Method of manufacturing a semiconductor component having a capacitor | Electricity | 11 | Expired |
| US5330932A | Method for fabricating GaInP/GaAs structures | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6368929B1 | Method of manufacturing a semiconductor component and semiconductor component thereof | Electricity | 10 | Expired |
| US6798064B1 | Electronic component and method of manufacture | Electricity | 9 | Expired |
| US5286997A | Method for forming an isolated, low resistance epitaxial subcollector for bipolar transistors | Electricity | 9 | Expired |
| US5391504A | Method for producing integrated quasi-complementary bipolar transistors and field effect transistors | Emerging Cross-Sectional Technologies | 8 | Expired |
| US8410580B2 | Device having conductive substrate via with catch-pad etch-stop | Electricity | 8 | Active |
| US7723224B2 | Microelectronic assembly with back side metallization and method for forming the same | Electricity | 7 | Active |
| US5783966A | Reducing junction capacitance and increasing current gain in collector-up bipolar transistors | Emerging Cross-Sectional Technologies | 6 | Expired |
| US9685345B2 | Semiconductor devices with integrated Schottky diodes and methods of fabrication | Electricity | 5 | Active |
| US5525817A | Bipolar transistor | Emerging Cross-Sectional Technologies | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.