Patent · US Expired

Method for batch cleaving semiconductor wafers and coating cleaved facets

US5171717A · kind A · utility

59Cited by
8References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 30, 1991
Grant dateDec 15, 1992
Priority date
Expiry dateJan 30, 2011

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T225/12
  • WIPO fieldOther special machines
  • WIPO sectorMechanical engineering

Abstract

A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer, provided with scribe lines defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands and guiding it around a curved, large radius surface thereby applying a bending moment. With a moment of sufficient magnitude, individual bars are broken off the wafer as this is advanced, the bars having front-and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighboring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.