Semiconductor having an improved electrode pad
US5172212A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 17, 1991 |
| Grant date | Dec 15, 1992 |
| Priority date | — |
| Expiry date | Jul 17, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided with a semiconductor substrate, an oxide film formed on the surface of the semiconductor substrate, an electrode pad formed on a region arbitrarily limited to the surface of this oxide layer, an insulation protection film that is laminated and formed on a peripheral portion of the electrode pad and the surface of the oxide layer where a central portion of this electrode pad is exposed, and a metal barrier film that is formed by covering the surface of a central exposed portion of the electrode pad, to prevent the corrosion of an electrode surface when wires are bonded and the electrode pad and wires are connected. This semiconductor device is manufactured by a method including a step of forming an electrode pad on an oxide film, a step of laminating an insulation protection film on the electrode pad and the oxidation film and of implementing patterning by a resist film onto the insulation protection film and for the selective removal of the insulation protection film so that an opening is made in the insulation protection film in a portion on the electrode pad, a step of laminating a metal barrier film on the electrode pad and the resist film, and…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.