Method of making P-type compound semiconductor employing trimethylgallium, trimethylarsenic and arsine
US5173445A · kind A · utility
5Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1991 |
| Grant date | Dec 22, 1992 |
| Priority date | — |
| Expiry date | Mar 20, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/11
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A P-type compound semiconductor layer doped with carbon is formed on a semi-insulating substrate by placing the substrate in a reactor, and carrying out vapor-phase epitaxy by feeding and thermally decomposing vapors of an organic metal compound including a methyl radical, arsine, and an alkyl compound of arsenic substantially simultaneously into the reactor so that a C-doped P-type compound semiconductor is deposited on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.