Machine and method for high vacuum controlled ramping curing furnace for sog planarization
US5174043A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 21, 1992 |
| Grant date | Dec 29, 1992 |
| Priority date | — |
| Expiry date | Jan 21, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31058
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus is described for vacuum degassing and curing a spin-on-glass layer on an article. The machine has a chamber into which an article, such as at least one or more semiconductor wafers are moved by appropriate means. Means are provided for causing the chamber to be evacuated and for continuing to maintain the vacuum at less than about 100 mtorr. The temperature of the article is maintained at a substantially constant level within a first range of temperature by appropriate means during the vacuum degassing. Means are provided to ramping the temperature at a controlled rate from the first range of temperature up to the desired second range of temperature for curing of the spin-on-glass layer. The temperature of the article is maintained at a substantially constant level within the second range of temperature by suitable means for the curing. Means are provided to allow a constant inert gas flow to fill the chamber under the vacuum conditions during the operation. Means are provided for cooling the chamber and the article.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.