Crystal growth of group II-VI compound semiconductor
US5174854A · kind A · utility
3Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 1991 |
| Grant date | Dec 29, 1992 |
| Priority date | — |
| Expiry date | May 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/064
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an underlie substrate placed at a low temperature portion in the solution. When the temperature of the vapor pressure treatment is 1050.degree. C., excellent photoluminescence peaks are obtained when the Se pressure is 6 to 9 atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.