Inventor · Odawara, JP

Michihiro Sano

28Patents
5h-index
20Co-inventors
69Inventor score

Filing activity: May 8, 1991 → Oct 7, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US6673478B2 Crystal-growth substrate and a ZnO-containing compound semiconductor device Emerging Cross-Sectional Technologies 24 Expired
US6664565B1 ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal Electricity 16 Expired
US6635903B2 White light emission diode Electricity 15 Expired
US6407405B1 p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals Electricity 15 Expired
US5707900A Method of heat-treating semiconductor crystal of a group II-group VI compound Electricity 8 Expired
US7858436B2 Semiconductor device, its manufacture method and template substrate Electricity 5 Active
US8137458B2 Epitaxial growth of ZnO with controlled atmosphere Chemistry; Metallurgy 5 Active
US5174854A Crystal growth of group II-VI compound semiconductor Emerging Cross-Sectional Technologies 3 Expired
US7438762B2 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate Emerging Cross-Sectional Technologies 3 Active
US7829207B2 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate Emerging Cross-Sectional Technologies 3 Active
US7691203B2 Film forming apparatus Chemistry; Metallurgy 3 Expired
US8436351B2 ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device Electricity 2 Active
US7482618B2 ZnO group epitaxial semiconductor device and its manufacture Electricity 2 Expired
US7834371B2 Reflective type semiconductor light emitting device Electricity 2 Active
US7288208B2 Method of manufacturing ZnO substrate from ZnO crystal formed by hydrothermal synthesis method Chemistry; Metallurgy 1 Active
US8043879B2 Semiconductor light emitting device manufacture method Electricity 1 Active
US9064791B2 Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, and an n-type ZnO based compound semiconductor laminate structure Electricity 0 Active
US8143618B2 ZnO based semiconductor device and its manufacture method Electricity 0 Active
US7728347B2 ZnO layer and semiconductor light emitting device Emerging Cross-Sectional Technologies 0 Active
US7943927B2 ZnO based semiconductor light emitting device and its manufacture method Electricity 0 Active
US7968905B2 ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device Electricity 0 Active
US7718468B2 Manufacture method for ZnO-containing compound semiconductor layer Electricity 0 Active
US9064790B2 Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure Electricity 0 Active
US9496350B2 P-type ZnO based compound semiconductor layer, a ZnO based compound semiconductor element, and an N-type ZnO based compound semiconductor laminate structure Electricity 0 Active
US9947826B2 ZnO-containing semiconductor structure and manufacturing thereof Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.