Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same
US5177584A · kind A · utility
6Cited by
10References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1991 |
| Grant date | Jan 5, 1993 |
| Priority date | — |
| Expiry date | Jan 28, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/643
Abstract
A bipolar SRAM which includes a forward bipolar transistor and a reverse bipolar transistor on an identical semiconductor substrate, is disclosed. Concretely, the base region of the reverse bipolar transistor is formed at a deeper position of the substrate than the base region of the forward bipolar transistor, thereby to heighten the cutoff frequency f.sub.T of the reverse bipolar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.