Ion-beam sputtering apparatus and method for operating the same
US5178738A · kind A · utility
6Cited by
1References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1991 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | May 10, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An ion-beam sputtering apparatus using an insulator target and a method for operating the same which is characterized by interposing a conductor film forming process during the ion beam processings using the insulator target. This conductor film formation prevents undesired charge build up on the inside of the apparatus and prevents undesired occurrence of abnormal discharge in the ion beam processing using an insulator as a target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.