Process for chemical vapor deposition of main group metal nitrides
US5178911A · kind A · utility
100Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 1991 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Nov 8, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing a thin film of a main group metal nitride, e.g., AlN, GaN or Sn.sub.3 N.sub.4, is provided. The vapors of a main group metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100.degree. C. to 400.degree. C. resulting in deposition of a film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.