Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
US5178986A · kind A · utility
32Cited by
3References
48Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1992 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Jun 19, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/022
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A radiation sensitive oligomeric compound is described as the photoactive component with a base soluble phenolic matrix resin to provide improved photo-resist composition having high light-sensitivity, high resolution, excellent developer resistance and excellent resistance to thermal flow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.