Hydrogen plasma passivation of GaAs
US5179029A · kind A · utility
12Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 1991 |
| Grant date | Jan 12, 1993 |
| Priority date | — |
| Expiry date | Jan 18, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is obtained using high pressure hydrogen plasmas, i.e. above 1 Torr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.