Integrated circuit with improved protection against negative transients
US5181091A · kind A · utility
35Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1991 |
| Grant date | Jan 19, 1993 |
| Priority date | — |
| Expiry date | Sep 16, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A battery-backed integrated circuit, with a double diode structure connected to signal lines. In the double diode structure, a first junction is three-dimensionally enclosed by a second junction, so that minority carriers generated at the first junction will be collected at the second junction. Thus, when a negative transient voltage appears on the signal line, the first junction can be forward biassed to source the needed current from ground, with minimal minority carrier injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.