Surface emission type semiconductor laser
US5182757A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 1991 |
| Grant date | Jan 26, 1993 |
| Priority date | — |
| Expiry date | Sep 9, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.