Method and apparatus for measuring the dimensions of patterned features on a lithographic photomask
US5184021A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 24, 1991 |
| Grant date | Feb 2, 1993 |
| Priority date | — |
| Expiry date | Jun 24, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70633
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system for inspecting and measuring the dimensions of patterned features on lithographic photomasks includes a confocal scanning microscope beneath which is mounted the photomask to be inspected. The photomask is moved to permit the imaging beam from the microscope to record reflectivity information at closely spaced points along a scan line at the metal-substrate interface within the photomask, and the unpatterned side of the mask is positioned facing the microscope so that the imaging beam passes through the transparent substrate material of the mask to the desired measurement plane. An objective lens specially corrected for imaging through transparent materials is used in the optical system, and compensating glass plates may be selectively placed between the objective lens and the photomask when the substrate of the mask is thinner than the thickness of transparent material for which the objective lens was corrected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.