Stacked capacitor of a DRAM cell with fin-shaped electrodes having supporting layers
US5187548A · kind A · utility
11Cited by
6References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1990 |
| Grant date | Feb 16, 1993 |
| Priority date | — |
| Expiry date | Sep 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
There is disclosed a stacked capacitor comprising a fin-shaped storage electrode of multiple polysilicon layers with supporting layers therebetween so as to compensate for the structural weakness of the fin-shaped storage electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.