Method of semiconductor device manufacture
US5188705A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1991 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Apr 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/006
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are modified and/or repaired by gas enhanced physical sputtering. A focused ion beam is scanned over an area to be removed while iodine vapor is directed toward the same area. The iodine vapor, which is focused by heating solid iodine to a temperature of 30.degree. C. to 50.degree. C., is adsorbed on the surface of the semiconductor device and aids in the selective sputtering of material to be impinged by the ion beam by enabling a chemical reaction at the material's surface. The iodine may be initially handled in a solid state, exhibiting a low vapor pressure, and is then heated to moderate temperatures inside the focused ion beam system without presenting a toxic hazard. The low reactivity of the iodine enables a high degree of contrast in reaction between the area struck by the ion beam and adjoining areas whereby accurate micromachining can be accomplished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.