Patent · US Expired

Method for manufacturing an electrically conductive tip composed of a doped semiconductor material

US5188977A · kind A · utility

54Cited by

7References

11Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Reinhard Stengl · Stadtbergen, DE
Hans-Willi Meul · Bruckmühl, DE
Wolfgang Hoenlein · Unterhaching, DE

Key dates

Filing date	Dec 6, 1991
Grant date	Feb 23, 1993
Priority date	—
Expiry date	Dec 6, 2011

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S148/05
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

For manufacturing an electrically conductive tip composed of a doped semiconductor material, a mask layer is produced on a substrate composed of the semiconductor material. This mask layer contains a material at least at its surface and directly on the substrate whereon the semiconductor material does not grow in a selective epitaxy. An opening wherein the surface of the substrate lies exposed is produced in the mask layer. The electrically conductive tip is produced by a selective epitaxy on the exposed surface of the substrate such that the layer growth in the direction parallel to the surface of the substrate is lower than in the direction perpendicular to the surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.