Hans-Willi Meul
7Patents
7h-index
6Co-inventors
48Inventor score
Filing activity: Mar 21, 1988 → Apr 3, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5188977A | Method for manufacturing an electrically conductive tip composed of a doped semiconductor material | Emerging Cross-Sectional Technologies | 54 | Expired |
| US4829015A | Method for manufacturing a fully self-adjusted bipolar transistor | Emerging Cross-Sectional Technologies | 17 | Expired |
| US5422303A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5326718A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 15 | Expired |
| US5498567A | Method for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistor | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5177582A | CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same | Electricity | 14 | Expired |
| US5402002A | Bipolar transistor with reduced base/collector capacitance | Electricity | 13 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.