Semiconductor device of MOS structure having p-type gate electrode
US5189504A · kind A · utility
49Cited by
8References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1992 |
| Grant date | Feb 23, 1993 |
| Priority date | — |
| Expiry date | Jan 30, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of a MOS structure having a p-type gate electrode has a gate electrode including at least two layers consisting of a boron-doped polysilicon layer and a polysilicon layer doped with boron and an inert material. This inert material is nitrogen or carbon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.