Method of polishing semiconductor wafer
US5191738A · kind A · utility
61Cited by
5References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 1991 |
| Grant date | Mar 9, 1993 |
| Priority date | — |
| Expiry date | Oct 25, 2011 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/013
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of polishing a semiconductor wafer, wherein the semiconductor wafer bonded to a plate is polished to a desired thickness by pressing the semiconductor wafer against a rotating turntable side, and at the same time, a thickness regulating member, whose surface layer is made of a material slower to polish than the semiconductor wafer, is arranged on the plane of the plate to control the thickness of the semiconductor wafer. The matrix of the thickness regulating member is made of silicon and the surface layer facing said turntable is a silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.