Lithium niobate etchant
US5194117A · kind A · utility
3Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1991 |
| Grant date | Mar 16, 1993 |
| Priority date | — |
| Expiry date | Jun 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/082
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Oxides of tantalum and niobium are selectively etched using patterned silicon oxide deposited by a low-temperature chemical vapor deposition as a mask and a sulfate flux to selectively remove exposed portions of the tantalum or niobium oxide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.