Method of anisotropic dry etching of thin film semiconductors
US5194119A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1990 |
| Grant date | Mar 16, 1993 |
| Priority date | — |
| Expiry date | Feb 22, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/467
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microwave ECR plasma etching method and apparatus employs a combination reactive gas medium supplied to a microwave excitation ECR plasma chamber coupled to a treatment chamber containing a Group II-VI sample to be etched. A reactive gas plasma is formed containing reactive species in the plasma chamber and the Group II-VI sample is irradiated with a beam of reactive species formed from the reactive gas plasma. The reactive gas medium is selected from the group consisting of a hydrogen halogenate, a mixture of a halogen gas and an inert gas, a mixture of a halogen gas and hydrogen gas, a mixture of a halogen gas, an inert gas and hydrogen gas, and a mixture of a halogen gas and nitrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.