Semiconductor chip transducer
US5195371A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 14, 1990 |
| Grant date | Mar 23, 1993 |
| Priority date | — |
| Expiry date | Feb 14, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A motion transducer fabricated from a semiconductor material by etched exposure and release of a resiliently suspended element. Electrical sensing and/or torquing is applied to the suspended element to produce mass or vibrational sensitivities to provide a transducer for various physical parameters. In the case of a gyroscopic transducer a mass is applied to the element and may be applied in a balanced configuration on either side. The semiconductor element and electrodes may be isolated by the use of buried PN junctions or dielectric layers, and a separately formed insulating dielectric bridge may be used to provide a support link between the suspended element and the remainder of the semiconductor material. A specific crystal orientation is useful in permitting etch control in freeing the suspended element from the remainder of the material. Suspension link stress relief is provided and a waffle construction achieved in the suspended element for use in motional transduction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.