Method of making source junction breakdown for devices with source-side erasing
US5196361A · kind A · utility
7Cited by
10References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1991 |
| Grant date | Mar 23, 1993 |
| Priority date | — |
| Expiry date | May 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A method for making a device and the device itself which utilizes selectively doping part of the channel directly adjacent to the source to improve source-channel junction breakdown voltage is disclosed. This is accomplished through reduced dopant incorporation in the channel directly adjacent to the source during the channel doping steps. The portion of the channel which receives less channel dopant should not be so great that the charging of the floating gate is significantly altered.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.