Ion beam profiling method and apparatus
US5198676A · kind A · utility
21Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1991 |
| Grant date | Mar 30, 1993 |
| Priority date | — |
| Expiry date | Sep 27, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion beam intensity and emittance measuring system. A substrate supports conductive zones or regions that are impacted by an ion beam. Periodically the conductive regions are discharged through an integrator circuit which produces an output corresponding to the charge buildup on the conductive region. By determining the charge for multiple such regions impacted by an ion beam, a two-dimensional mapping of ion beam intensity vs. position is obtained on essentially a real-time basis. An emittance mask is also placed over the substrate and a measure of the emittance or spread of the ion beam is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.