Via metallization for AlN ceramic electronic package
US5200249A · kind A · utility
13Cited by
6References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 1991 |
| Grant date | Apr 6, 1993 |
| Priority date | — |
| Expiry date | Aug 22, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metallization formulations containing a mixture of AlN and metal are used to form hermetic vias in AlN dielectric bases for electronic packaging. The metal may be W, Mo, or mixtures thereof. The metallization may be cofired with the AlN dielectric base. The metallization is especially useful for making electrically conductive hermetic through-vias in AlN bases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.