Semiconductor device and microwave process for its manufacture
US5204272A · kind A · utility
19Cited by
17References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1991 |
| Grant date | Apr 20, 1993 |
| Priority date | — |
| Expiry date | Dec 13, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Open circuit voltage of photovoltaic devices manufactured by a microwave deposition process is increased by disposing a bias wire in the microwave energized plasma and applying a positive voltage of approximately 100 volts to the wire during only a portion of the time in which the intrinsic semiconductor layer is being deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.