Chi C. Yang
23Patents
15h-index
22Co-inventors
81Inventor score
Filing activity: Dec 14, 1981 → Mar 24, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5977476A | High efficiency photovoltaic device | Emerging Cross-Sectional Technologies | 247 | Expired |
| US4698234A | Vapor deposition of semiconductor material | Electricity | 186 | Expired |
| US4696758A | Gas mixtures for the vapor deposition of semiconductor material | Electricity | 177 | Expired |
| US4637895A | Gas mixtures for the vapor deposition of semiconductor material | Electricity | 170 | Expired |
| US4816082A | Thin film solar cell including a spatially modulated intrinsic layer | Emerging Cross-Sectional Technologies | 119 | Expired |
| US5298086A | Method for the manufacture of improved efficiency tandem photovoltaic device and device manufactured thereby | Emerging Cross-Sectional Technologies | 82 | Expired |
| US5346853A | Microwave energized deposition process with substrate temperature control for the fabrication of P-I-N photovoltaic devices | Emerging Cross-Sectional Technologies | 70 | Expired |
| US5569332A | Optically enhanced photovoltaic back reflector | Emerging Cross-Sectional Technologies | 60 | Expired |
| US4379943A | Current enhanced photovoltaic device | Emerging Cross-Sectional Technologies | 48 | Expired |
| US5296045A | Composite back reflector for photovoltaic device | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5221854A | Protective layer for the back reflector of a photovoltaic device | Emerging Cross-Sectional Technologies | 23 | Expired |
| US5204272A | Semiconductor device and microwave process for its manufacture | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4769682A | Boron doped semiconductor materials and method for producing same | Emerging Cross-Sectional Technologies | 19 | Expired |
| US4624862A | Boron doped semiconductor materials and method for producing same | Emerging Cross-Sectional Technologies | 19 | Expired |
| US5256576A | Method of making pin junction semiconductor device with RF deposited intrinsic buffer layer | Emerging Cross-Sectional Technologies | 16 | Expired |
| US6087580A | Semiconductor having large volume fraction of intermediate range order material | Emerging Cross-Sectional Technologies | 13 | Expired |
| US7964476B2 | Method and apparatus for the laser scribing of ultra lightweight semiconductor devices | Emerging Cross-Sectional Technologies | 7 | Active |
| US5231048A | Microwave energized deposition process wherein the deposition is carried out at a pressure less than the pressure of the minimum point on the deposition system's Paschen curve | Electricity | 5 | Expired |
| US6468829B2 | Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6274461A | Method for depositing layers of high quality semiconductor material | Emerging Cross-Sectional Technologies | 3 | Expired |
| US5334423A | Microwave energized process for the preparation of high quality semiconductor material | Electricity | 3 | Expired |
| US7902049B2 | Method for depositing high-quality microcrystalline semiconductor materials | Emerging Cross-Sectional Technologies | 1 | Expired |
| US4756924A | Method for the microwave fabrication of boron doped semiconductor materials | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.