Method for the manufacturing of a thyristor with defined lateral resistor

US5204273A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Reinhold Kuhnert · Munich, DE
• Heinz Mitlehner · Uttenreuth, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Frank Pfirsch · Birkenfeld, DE

Key dates

• Filing date: Jul 1, 1991
• Grant date: Apr 20, 1993
• Expiry date: Jul 1, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/133

Abstract

Thyristor with defined lateral resistor and method for the manufacturing thereof. The thyristor has a resistor area (5) for the generation of a lateral resistor, for example between an emitter field (8) and an auxiliary emitter field (7), whereby the resistor are (5) has a defined lower doping concentration than the layer (2) surrounding it. The defined lower doping concentration is generated by recesses (3) in an occupation layer and can be adjusted by the ratio of the widths alternately arranged recesses (3) and ribs (4). The recess (3) and the ribs (4) are generated either by diffusion and subsequent etching or by implantation with an implantation mask, before the deposition layer is driven into the semiconductor body of the thyristor by heat supply from a surface.