Frank Pfirsch
146Patents
14h-index
96Co-inventors
89Inventor score
Filing activity: Jul 1, 1991 → Feb 28, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7538412B2 | Semiconductor device with a field stop zone | Electricity | 137 | Active |
| US6201279A | Semiconductor component having a small forward voltage and high blocking ability | Electricity | 117 | Expired |
| US6465869B2 | Compensation component and process for producing the compensation component | Electricity | 87 | Expired |
| US6720616B2 | Trench MOS transistor | Electricity | 61 | Expired |
| US8643085B2 | High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure | Electricity | 51 | Active |
| US6803627B2 | Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone | Electricity | 31 | Expired |
| US6320205A | Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode | Electricity | 23 | Expired |
| US6541818B2 | Field-effect transistor configuration with a trench-shaped gate electrode and an additional highly doped layer in the body region | Electricity | 21 | Expired |
| US6815769B2 | Power semiconductor component, IGBT and field-effect transistor | Electricity | 20 | Expired |
| US7459365B2 | Method for fabricating a semiconductor component | Electricity | 19 | Active |
| US8384151B2 | Semiconductor device and a reverse conducting IGBT | Electricity | 17 | Active |
| US7173306B2 | Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone | Electricity | 14 | Expired |
| US7655975B2 | Power trench transistor | Electricity | 14 | Expired |
| US5736445A | Method for producing at least two transsistors in a semiconductor body | Electricity | 14 | Expired |
| US6445048B1 | Semiconductor configuration having trenches for isolating doped regions | Electricity | 12 | Expired |
| US6064103A | Device with a P-N junction and a means of reducing the risk of breakdown of the junction | Electricity | 10 | Expired |
| US6762440B1 | Semiconductor component and corresponding test method | Electricity | 10 | Expired |
| US7696600B2 | IGBT device and related device having robustness under extreme conditions | Electricity | 9 | Active |
| US7436023B2 | High blocking semiconductor component comprising a drift section | Electricity | 9 | Active |
| US6531748B2 | Semiconductor power component with a reduced parasitic bipolar transistor | Electricity | 9 | Expired |
| US7893486B2 | Field plate trench transistor and method for producing it | Electricity | 9 | Active |
| US6924532B2 | Field-effect power transistor | Electricity | 8 | Expired |
| US8264033B2 | Semiconductor device having a floating semiconductor zone | Electricity | 8 | Active |
| US5204273A | Method for the manufacturing of a thyristor with defined lateral resistor | Electricity | 8 | Expired |
| US7586161B2 | Edge structure with voltage breakdown in the linear region | Electricity | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.