Dry etching method for semiconductor
US5205905A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 30, 1991 |
| Grant date | Apr 27, 1993 |
| Priority date | — |
| Expiry date | May 30, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etching method for Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.1) semiconductor uses plasma of a boron trichloride (BCl.sub.3) gas. The etching rate of the method is 490 .ANG./min. No crystal defect is produced in the etched semiconductor by the dry etching with the plasma of a BCl.sub.3 gas. After etching with the plasma of a BCl.sub.3 gas, the semiconductor is successively etched by an inert gas. The electrode formed on the etched surface is contacted ohmicly with the semiconductor. Ohmic contact can be obtained without sintering. An LED is produced by the dry etching method. The LED comprises a substrate, an n-layer (Al.sub.x Ga.sub.1-x N; 0.ltoreq.x<1), an i-layer, an electrode formed on the etched surface of the n-layer through a through hole, the through hole being formed through the i-layer to the n-layer by the dry etching with the plasma of the born trichloride (BCl.sub.3) gas and being successively etched by the plasma of an inert gas, and an electrode formed on the surface of said i-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.