Method of and apparatus for non-contact temperature measurement
US5208643A · kind A · utility
33Cited by
3References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 5, 1990 |
| Grant date | May 4, 1993 |
| Priority date | — |
| Expiry date | Oct 5, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/0074
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The temperature and radiant energy emissivity of a semiconductor substrate or wafer undergoing processing are monitored by combining indications derived from an interferometer and the intensity of radiant energy emitted from the substrate. The radiant energy intensity is detected at adjacent maxima or minima in the intensity of the interference pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.