James A. Fair
21Patents
17h-index
24Co-inventors
81Inventor score
Filing activity: Mar 29, 1983 → Jun 11, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7897215B1 | Sequential UV induced chemical vapor deposition | Chemistry; Metallurgy | 507 | Expired |
| US6627268B1 | Sequential ion, UV, and electron induced chemical vapor deposition | Chemistry; Metallurgy | 465 | Expired |
| US6720260B1 | Sequential electron induced chemical vapor deposition | Chemistry; Metallurgy | 462 | Expired |
| US7144806B1 | ALD of tantalum using a hydride reducing agent | Electricity | 280 | Expired |
| US6844258B1 | Selective refractory metal and nitride capping | Electricity | 207 | Expired |
| US6464779B1 | Copper atomic layer chemical vapor desposition | Electricity | 140 | Expired |
| US7005372B2 | Deposition of tungsten nitride | Electricity | 136 | Expired |
| US7691749B2 | Deposition of tungsten nitride | Electricity | 81 | Active |
| US4565157A | Method and apparatus for deposition of tungsten silicides | Chemistry; Metallurgy | 81 | Expired |
| US6849122B1 | Thin layer metal chemical vapor deposition | Electricity | 78 | Expired |
| US7157798B1 | Selective refractory metal and nitride capping | Electricity | 54 | Expired |
| US6905543B1 | Methods of forming tungsten nucleation layer | Chemistry; Metallurgy | 46 | Expired |
| US7107998B2 | Method for preventing and cleaning ruthenium-containing deposits in a CVD apparatus | Chemistry; Metallurgy | 45 | Expired |
| US5208643A | Method of and apparatus for non-contact temperature measurement | Physics | 33 | Expired |
| US5741363A | Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition | Chemistry; Metallurgy | 28 | Expired |
| US6010748A | Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector | Chemistry; Metallurgy | 21 | Expired |
| US8864935B2 | Plasma generator apparatus | Electricity | 18 | Active |
| US7014709B1 | Thin layer metal chemical vapor deposition | Chemistry; Metallurgy | 8 | Expired |
| US4920908A | Method and apparatus for deposition of tungsten silicides | Chemistry; Metallurgy | 8 | Expired |
| US5751019A | Method and structure for reducing short circuits between overlapping conductors | Electricity | 6 | Expired |
| US7176140B1 | Adhesion promotion for etch by-products | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.